Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

and a host of other operations

It protects the lithium metal used in the anode from oxidation by providing an impermeable barrier against air and moisture while permitting the transfusion Lithium ions

This system provides most applications in battery testing fields such as electrode materials research

It can be easily placed into a glove box with a transition chamber diameter larger than 230mm

Package:  Each wafer is packed in 1000 class clean room

industrial and commercial specifications

Appearance         : silver grey

min order of $1000 is required

80mm Height 98mm O

One steel cylinder for releasing out sample

The customer can connect the KF25 bellows vacuum hose to the pump to increase exhaust rate and achieve higher vacuum

Crystal  Color