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SKU:23033914811
Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50USGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A
8 polymer battery analyzer clamp with temperature detector and cable for universal connecting (compatible for pouch cell and cylindrical cell
Primary Flat Location: Projected C-Axis 45 +/- 2 degree
and lower expansion at high temperature
EQ-Die-30D is a complete pellet pressing die with 30 mm I
2 mm) Outer Diameter 4 3/4" (120mm) Weight 22 Lbs
Name Qty 1 Main machine (15T Manual hydraulic pressing machine) 1 unit 2 Cold isostatic pressing dies (locating plate
7~1Mpa) is required for operation
such as superalloys
208-240VAC is also available upon request
Thread Type
The flow rate for gases should be limited to<200 SCCM (or 200ml/min) for reducing thermal shocks to the tube
Packing: in film supported box
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