GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick

GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron ThickGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Sizes 10mmx10mm x0. 5mm Substrate Sapphire, Orientation C (0001) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown

Use the provided pins to position the de-molder for easy lining up

please click the picture below for the details (max

You may use lab press and dry pressing die below to preparate a electrode pellet instead of using electrode coated Al or Cu foil

Carrier concentration:                   ( 1-2)x10^17 cm^-3

Resistivity:                            0

EPD:                              <8000/cm^2

Grown method:              High-pressure vertical Bridgman

Please click the picture below for details:

Fabrication: Chemical co-precipitation

Compact structure

ACS Energy Letter

The customer can easily combine up to 20 battery analyzers (0